Nitrogen-impurity–native-defect complexes in ZnSe
نویسندگان
چکیده
منابع مشابه
Nitrogen-impurity–native-defect complexes in ZnSe
Rights: © 1998 American Physical Society (APS). This is the accepted version of the following article: Pöykkö, S. & Puska, M. J. & Nieminen, Risto M. 1998. Nitrogen-impuritynative-defect complexes in ZnSe. Physical Review B. Volume 57, Issue 19. 12174-12180. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.57.12174, which has been published in final form at http://journals.aps.org/prb/abstra...
متن کاملTime-resolved luminescence studies of heavily nitrogen doped ZnSe
Time-resolved luminescence data from heavily nitrogen doped ZnSe ~total N concentration exceeding mid-10/cm) is presented. The luminescence exhibited a decay time and a rise time which increased with decreasing energy of observation. Furthermore, both the decay times and rise times decreased with increasing temperature. These observations are consistent with the following model: ~i! a band of s...
متن کاملUltrafast carrier dynamics in type II ZnSe/CdS/ZnSe nanobarbells.
We employ femtosecond transient absorption spectroscopy to get an insight into ultrafast processes occurring at the interface of type II ZnSe/CdS heterostructured nanocrystals fabricated via colloidal routes and comprising a barbell-like arrangement of ZnSe tips and CdS nanorods. Our study shows that resonant excitation of ZnSe tips results in an unprecedently fast transfer of excited electrons...
متن کاملDefect Complexes in Silicon: Electronic Structures and Positron Annihilation
In silicon processing technology one of the most important current objectives is to achieve a controlled impurity doping in the crystal. Point defects and defect complexes present in the crystal influence in an important way the electrical activity and the diffusion properties of the dopants. In this thesis, defect complexes in silicon are studied by using quantum-mechanical electronic-structur...
متن کاملDefect complexes in carbon and boron nitride nanotubes.
The effect of defect complexes on the stability, structural and electronic properties of single-walled carbon nanotubes and boron nitride nanotubes is investigated using the ab initio pseudopotential density functional method implemented in the Castep code. We found more substantial atomic relaxations in the zig-zag carbon nanotube than the armchair one. We find that the B(C)B(c) defect introdu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 1998
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.57.12174